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Silicon carbide devices5/27/2023 COTS, TX, TXV and S level screening is available. Hermetic TO-258 packages with 200☌ operation make these 650V TO 1700V SiC diodes ideal for power supplies, motor controls and applications requiring the smallest size, lightest weight and highest efficiency levels. ![]() In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon Carbide (SiC) diodes maintain constant characteristics, resulting in better performance. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. Available in a wide variety of packages including hermetic they offer designers high efficiency and the ultimate in robust technology. Solitron’s Silicon Carbide (SiC) Schottky diodes range from 650V to 1700V and include singles, duals and bridge configurations. ![]() ■ High blocking voltage with low R DS(on)Hermetic Packages ■ High speed switching with low Capacitance
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